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| EMZ7 / UMZ7N Transistors General purpose transistor (dual transistors) EMZ7 / UMZ7N !Features 1) Both a 2SA2018 chip and 2SC5585 chip in a EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. 5) Low VCE(sat) ! External dimensions (Units : mm) EMZ7 UMZ7N (4) 0.65 1.3 0.65 0.7 0.9 0.22 0.2 (5) (6) (2) (6) 1.2 1.6 0.13 1.25 0.5 2.1 0.15 Each lead has same dimensions 0.1Min. 0to0.1 Each lead has same dimensions !Structure NPN / PNP epitaxial planar silicon transistor ROHM : EMT6 Abbreviated symbol : Z7 ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : Z7 ! Equivalent Circuit EMZ7 / UMZ7N (3) (2) (1) Tr1 Tr2 (4) (5) (6) ! Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits Tr1 15 12 6 500 Tr2 -15 -12 -6 -500 Unit V V V mA mW C C 150(TOTAL) 150 -55+150 1 1 120mW per element must not be exceeded. (1) (1) 2.0 (5) (2) (4) (3) 0.5 0.5 1.0 1.6 (3) EMZ7 / UMZ7N Transistors ! Electrical characteristics (Ta = 25C) Tr1 (NPN) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 - - - 270 - - Typ. - - - - - 90 - 320 7.5 Max. - - - 0.1 0.1 250 680 - - Unit V V V A A mV - MHz pF IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC/IB=200mA/10mA VCE/IC=2V/10mA VCE=2V, IC=-10mA, f=100MHz VCB=10V, IE=0A, f=1MHz Conditions Tr2 (PNP) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -15 -12 -6 - - - 270 - - Typ. - - - - - -100 - 260 6.5 Max. - - - -0.1 -0.1 -250 680 - - Unit V V V A A mV - MHz pF IC=-10A IC=-1mA IE=-10A VCB=-15V VEB=-6V IC/IB=-200mA/-10mA VCE/IC=-2V/-10mA VCE=-2V, IC=10mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions !Packaging specifications Packaging type Code Part No. UMZ7N EMZ7 - Basic ordering unit (pieces) Taping TR 3000 T2R 8000 - !Electrical characteristic curves Tr1 (NPN) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 COLLECTOR CURRENT : IC(mA) VCE=2V 1000 500 DC CURRENT GAIN : hFE Ta=125C 25C -40C VCE=2V 1000 500 200 100 50 20 10 5 2 1 Ta=125C 25C -40C IC/IB=20 500 200 100 50 25C 25C -40C 200 100 50 20 10 5 2 20 10 5 2 1 Ta = 1 0 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 5001000 BASE TO EMITTER VOLTAGE : VBE(V) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) Fig.1 Grounded emitter propagation characteristics Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current ( ) EMZ7 / UMZ7N Transistors COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (mV) 1000 500 200 100 50 20 IC/IB=50 10 5 2 10000 1000 Ta=25C IC/IB=20 Ta=-40C 25C 125C 5000 2000 1000 500 200 100 VCE=2V Ta=25C Pulsed fT (MHZ) 500 200 100 50 20 10 50 20 10 5 2 1 20 10 1 1 2 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-emitter saturation voltage vs. collector current ( ) Fig.5 Base-emitter saturation voltage vs. collector current Fig.6 Collector output capacitance Emitter input capacitance vs. base voltage EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 500 200 100 50 Cib 20 10 5 2 1 Cob IE=0A f=1MHz Ta=25C 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector output capacitance vs collector-base voltage Emitter input capacitance vs emitter-base voltage Tr2 (PNP) VCE=2V 500 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 1000 Ta=125C 1000 IC/IB=20 500 200 100 Ta=125C COLLECTOR CURRENT : IC (mA) 500 200 100 50 Ta=125 C VCE=2V Ta=25C 200 100 50 20 10 5 2 Ta= -40C 50 20 10 5 2 1 1 2 5 10 Ta=25C 20 10 5 2 1 0 Ta= -40C Ta=25C Ta= -40C 0.5 1.0 1.5 1 1 2 5 10 20 50 100 200 500 1000 20 50 100 200 500 1000 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.8 Grounded emitter propagation characteristics Fig.9 DC current gain vs. collector current Fig.10 Collector-emitter saturation voltage vs. collector current ( ) EMZ7 / UMZ7N Transistors COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 IC / IB=50 IC / IB=20 IC / IB=10 TRANSITION FREQUENCY : fT (MHz) Ta=25C BASER SATURATION VOLTAGE : VBE (sat) (mV) 1000 10000 IC/IB=20 5000 2000 1000 500 Ta=125C Ta=25C Ta= -40C 1000 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 1 2 5 10 20 VCE=2V Ta=25C 200 100 50 20 10 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IC (mA) Fig.11 Collector-emitter saturation voltage vs. collector current Fig.12 Base-emitter saturation voltage vs. collector current Fig.13 Gain bandwidth product vs. emitter current EMITTER INPUT CAPACITANCE : Cib(F) 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 Cob Cib IE=0A f=1MHz Ta=25C 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB(V) Fig.14 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage |
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